Vertical memory cells and memory devices using the same

ABSTRACT

Vertical memory cells and memory devices using the same are disclosed. In one example, a memory cell formed on a backend layer over a substrate is disclosed. The memory cell includes: a first electrode, a second electrode and a magnetic tunnel junction. The first electrode has sidewalls and a bottom surface disposed over the backend layer. The second electrode has sidewalls and a bottom surface in contact with the backend layer. The magnetic tunnel junction is formed between the first electrode and the second electrode. The magnetic tunnel junction is coupled to a sidewall of the first electrode and coupled to a sidewall of the second electrode.

CROSS-REFERENCE TO RELATED APPLICATION

The present application claims priority to U.S. Provisional PatentApplication No. 62/591,456, filed on Nov. 28, 2017, which isincorporated by reference herein in its entirety.

BACKGROUND

Semiconductor memories are widely used in integrated circuits forelectronic applications, including radios, televisions, cell phones, andpersonal computing devices, etc. One type of semiconductor memory deviceinvolves spin electronics, which combines semiconductor technology andmagnetic materials and devices. The spins of electrons, through theirmagnetic moments, rather than the charge of the electrons, are used toindicate a bit. One such spin electronic device is a magnetoresistiverandom access memory (MRAM) array, which includes conductive lines (wordlines and bit lines) positioned in different directions, e.g.,perpendicular to each other in different metal layers. The conductivelines sandwich a magnetic tunnel junction (MTJ), which functions as amagnetic memory cell. Compared to current volatile memory, MRAMtypically has similar performance and density, but lower powerconsumption.

As integrated circuits (IC) including such MRAM cells become morepopular, it is desirable to maximize the number of MRAM cells within agiven area of IC to maximize storage capacity. An existing MRAM deviceincludes MRAM cells arranged in an array on a backend layer. Eachindividual MRAM cell in the existing MRAM device includes an MTJarranged in parallel to the backend layer. Packing more and more MRAMcells in a given area may encounter a limit. For example, decreasing thesize of the MRAM cells would allow for higher storage density, but atsome critical size the magnetization of the magnetic memory cell startsflipping randomly its direction due to thermal activation which markssuperparamagnetic state of the system, which sets a superparamagneticlimit on the current storage density and capacity. Thus, existing MRAMcells and devices and methods to make the same are not entirelysatisfactory.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that various features are not necessarily drawn to scale. In fact,the dimensions and geometries of the various features may be arbitrarilyincreased or reduced for clarity of discussion. Like reference numeralsdenote like features throughout specification and drawings.

FIG. 1 illustrates a cross-sectional view of exemplary memory cellshaving a vertical structure on a unit area, in accordance with someembodiments of the present disclosure.

FIG. 2 illustrates a top view of an exemplary memory cell arrayincluding vertical memory cells on a unit area, in accordance with someembodiments of the present disclosure.

FIGS. 3A, 3B, 3C, 3D, 3E, 3F, 3G, 3H, 3I, 3J, 3K, 3L, 3M, 3N, 3O, 3P, 3Qand 3R illustrate cross-sectional views of an exemplary memory deviceduring various fabrication stages, in accordance with some embodimentsof the present disclosure.

FIG. 4 illustrates a top view of an exemplary memory device, inaccordance with some embodiments of the present disclosure.

FIG. 5 illustrates a cross-sectional view of an exemplary memory cell,in accordance with some embodiments of the present disclosure.

FIG. 6 illustrates exemplary conductive lines electrically connectingmultiple memory cells, in accordance with some embodiments of thepresent disclosure.

FIG. 7 is a flow chart illustrating an exemplary method for forming amemory cell, in accordance with some embodiments of the presentdisclosure.

DETAILED DESCRIPTION OF EXEMPLARY EMBODIMENTS

The following disclosure describes various exemplary embodiments forimplementing different features of the subject matter. Specific examplesof components and arrangements are described below to simplify thepresent disclosure. These are, of course, merely examples and are notintended to be limiting. For example, the formation of a first featureover or on a second feature in the description that follows may includeembodiments in which the first and second features are formed in directcontact, and may also include embodiments in which additional featuresmay be formed between the first and second features, such that the firstand second features may not be in direct contact. In addition, thepresent disclosure may repeat reference numerals and/or letters in thevarious examples. This repetition is for the purpose of simplicity andclarity and does not in itself dictate a relationship between thevarious embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly. Terms such as“attached,” “affixed,” “connected” and “interconnected,” refer to arelationship wherein structures are secured or attached to one anothereither directly or indirectly through intervening structures, as well asboth movable or rigid attachments or relationships, unless expresslydescribed otherwise.

Unless otherwise defined, all terms (including technical and scientificterms) used herein have the same meaning as commonly understood by oneof ordinary skill in the art to which this disclosure belongs. It willbe further understood that terms, such as those defined in commonly useddictionaries, should be interpreted as having a meaning that isconsistent with their meaning in the context of the relevant art and thepresent disclosure, and will not be interpreted in an idealized oroverly formal sense unless expressly so defined herein.

Reference will now be made in detail to the present embodiments of thedisclosure, examples of which are illustrated in the accompanyingdrawings. Wherever possible, the same reference numbers are used in thedrawings and the description to refer to the same or like parts.

As integrated circuits (IC) including magnetoresistive random accessmemory (MRAM) cells become more popular, it is desirable to maximizestorage density, i.e. the number of MRAM cells within a given area ofIC, to maximize storage capacity. Each individual MRAM cell in anexisting MRAM device is arranged in parallel to a backend layer over thesubstrate. Packing more and more such MRAM cells in a given area mayencounter a limit. For example, decreasing the size of the MRAM cellswould allow for higher storage density, but at a certain critical sizethe magnetization of the magnetic memory cell starts flipping randomlyits direction due to thermal activation which marks superparamagneticstate of the system, which sets a superparamagnetic limit on the storagedensity and capacity of existing MRAM devices.

The present disclosure provides various embodiments of a novel MRAMdevice and methods to form the same. In some embodiments, the disclosedMRAM device includes a plurality of MRAM cells on a backend layer. Eachof the MRAM cells includes a vertically extending magnetic tunneljunction formed between two electrodes. Forming a vertical magnetictunnel junction or vertical MRAM cell that is perpendicular to a topsurface of the backend layer allows the MRAM device to increase itsstorage density, i.e. increasing the number of MRAM cells packed in aunit area, without suffering the superparamagnetic limit.

The present disclosure is applicable to any magnetic storage includingan MRAM device. The disclosed vertical memory cell structure can greatlyimprove storage capacity of an MRAM device. The novel vertical cellstructure is easy to approach and detect. In the present disclosure, theterms “cell,” “memory cell,” and “MRAM cell” may be interchangeablyused.

FIG. 1 illustrates a cross-sectional view of exemplary memory cellshaving a vertical structure on a unit area, in accordance with someembodiments of the present disclosure. As shown in FIG. 1, there aremultiple memory cells 110 packed on a unit area 120 over a substrate.For example, the memory cells 110 are MRAM cells in an MRAM device. Eachof the memory cells 110 has a vertical structure that is perpendicularto a top surface of the substrate. Each memory cell 110 has a length Land a thickness T that may be smaller than the length L. In variousembodiments, the ratio T/L between the thickness T and the length L maybe in the range of 0.02-1. In one embodiment, the ration T/L is about0.7. In one example, the thickness T is 1000 Angstroms and the length Lis 1450 Angstroms. Each memory cell includes two electrodes 112 and amagnetic tunnel junction (MTJ) 111 formed between the two electrodes112.

FIG. 2 illustrates a top view of an exemplary memory cell arrayincluding vertical memory cells on a unit area, in accordance with someembodiments of the present disclosure. As shown in FIG. 2, the memorycell array 210 in this example is a square array on a backend layer overthe substrate and includes a plurality of memory cells 220 arrangedalong an X direction and a Y direction. Each memory cell 220 may be anMRAM cell that has a cuboid shape over the substrate. FIG. 2 also showsa top view 220′ of the memory cell. As shown in the top view 220′, eachmemory cell includes a sandwich structure including an MTJ between twoelectrodes. In this example, the sandwich structure has a length 221 ofabout 1450 Angstroms along the X direction, and a thickness 222 of about1000 Angstroms along the Y direction. Each memory cell 220, 220′ iselectrically coupled to two conductive lines each having a thickness 223of 500 Angstroms.

As shown in FIG. 2, a memory cell 220 is about 1050 Angstroms away froma neighbor memory cell along the Y direction; and is about 1700Angstroms away from a neighbor memory cell along the X direction. In oneembodiment, when a superparamagnetic limit of the MTJ in each memorycell 220 limits the size or length of the MTJ to be 1450 Angstroms alongthe X direction, the disclosed vertical structure of the MTJ can furtherdecrease the thickness of the memory cell along the Y direction to be1000 Angstroms. As such, compared to a horizontal or lateral MRAMstructure, the vertical MRAM structure in this embodiment can increasethe storage density of an MRAM device by about 25%.

FIGS. 3A, 3B, 3C, 3D, 3E, 3F, 3G, 3H, 3I, 3J, 3K, 3L, 3M, 3N, 3O, 3P, 3Qand 3R illustrate cross-sectional views of an exemplary memory deviceduring various fabrication stages, in accordance with some embodimentsof the present disclosure. In some embodiments, the memory device may bean MRAM device. The MRAM device may be included in a microprocessor,memory cell, and/or other integrated circuit (IC). In addition, FIGS. 3Athrough 3R are simplified for a better understanding of the concepts ofthe present disclosure. For example, although the figures illustrate theMRAM device, it is understood the IC, in which the MRAM device isformed, may include a number of other devices comprising resistors,capacitors, inductors, fuses, etc., which are not shown in FIGS. 3Athrough 3R, for purposes of clarity of illustration.

FIG. 3A is a cross-sectional view of the MRAM device 300 including abackend layer 310 with a conductive material 315, which is provided, atone of the various stages of fabrication, according to some embodimentsof the present disclosure. The MRAM device 300 in FIG. 3A furtherincludes an inter-metal dielectric (IMD) layer 320 formed on the backendlayer 310. Each conductive material 315 serves as a via in the backendlayer 310. Although there are only two conductive materials 315 shown inFIG. 3A, it can be understood that FIG. 3A focuses on an illustration ofa portion of the MRAM device, and the other portions on the same backendlayer 310 may be repetitive of what is shown in FIG. 3A.

In one embodiment, the backend layer 310 may be a top layer of an MRAMarray formed under the backend layer 310. In that situation, theconductive materials 315 are multiple conductive lines in the backendlayer 310 that electrically connect the MRAM cells in the MRAM arrayunder the backend layer 310. In another embodiment, there is no MRAMarray under the backend layer 310 such that the backend layer 310 is thebottom layer of the MRAM device and includes no conductive material 315.

In some embodiments, the backend layer 310 has a dielectric materialformed over various device features (e.g., a source, drain, or gateelectrode of a transistor). Such a dielectric material backend layer 310may include at least one of: silicon oxide, a low dielectric constant(low-k) material, other suitable dielectric material, or a combinationthereof. The low-k material may include fluorinated silica glass (FSG),phosphosilicate glass (PSG), borophosphosilicate glass (BPSG), carbondoped silicon oxide (SiO_(x)C_(y)), Xerogel, Aerogel, amorphousfluorinated carbon, Parylene, BCB (bis-benzocyclobutenes), SiLK (DowChemical, Midland, Mich.), polyimide, and/or other future developedlow-k dielectric materials.

In such an embodiment where the backend layer 310 includes a dielectricmaterial, the conductive material 315 may be a via structure (i.e., avertical conductive structure) formed within the backend layer 310. Insome embodiments, the conductive material 315 may be formed of a metalmaterial, e.g., copper (Cu), aluminum (Al), tungsten (W), etc.

FIG. 3B is a cross-sectional view of the MRAM device 300 including aphotoresist 380, which is formed on the backend layer 310 at one of thevarious stages of fabrication, according to some embodiments of thepresent disclosure. As shown in FIG. 3B, the photoresist 380 has aprofile that covers the two adjacent conductive materials 315 and thebackend layer portion between the two adjacent conductive materials 315.The sidewalls of the photoresist 380 align with the outside walls of thetwo adjacent conductive materials 315. In one embodiment, thephotoresist 380 may be formed by a deposition process to form aphotoresist layer over the IMD layer 320, and a lithography process todefine the profile of the photoresist layer that includes thephotoresist 380. The photoresist 380 may include a light-sensitivematerial.

FIG. 3C is a cross-sectional view of the MRAM device 300 in which theIMD 320 is patterned, at one of the various stages of fabrication,according to some embodiments of the present disclosure. According tosome embodiments, the IMD 320 is patterned to remove portions that arenot covered by the photoresist 380 as shown in FIG. 3B. As such, the IMD320 becomes a stack in FIG. 3C, covering the two adjacent conductivematerials 315 and the backend layer portion between the two adjacentconductive materials 315. The sidewalls of the IMD stack 320 align withthe outside walls of the two adjacent conductive materials 315.

In some embodiments, the patterning process performed on the IMD 320 mayinclude: based on a profile of the photoresist 380 defined by alithography process, a dry/wet etching process to etch portions of theIMD 320 that are not covered by the defined profile of the lithographyprocess layer, a cleaning process, and a soft/hard baking process toform the patterned IMD stack.

FIG. 3D is a cross-sectional view of the MRAM device 300 including afirst electrode layer 330, formed over the IMD stack 320 and the backendlayer 310, at one of the various stages of fabrication, according tosome embodiments of the present disclosure. According to someembodiments, the first electrode layer 330 may be formed by depositing ametal material, e.g. tantalum nitride (TaN). Due to the stack shape ofthe IMD stack 320, the first electrode layer 330 has two verticalportions along the two sidewalls of the IMD stack 320 respectively, andhorizontal portions on the IMD stack 320 and on the backend layer 310.

FIG. 3E is a cross-sectional view of the MRAM device 300 including anMTJ layer 340, formed over the first electrode layer 330, at one of thevarious stages of fabrication, according to some embodiments of thepresent disclosure. According to some embodiments, the MTJ layer 340 maybe formed by depositing a lower contact layer, a lower ferromagneticlayer, an insulator layer, an upper ferromagnetic layer, and an uppercontact layer, in respective order. The lower ferromagnetic layer andupper ferromagnetic layer may include a ferromagnetic material, e.g.iron, nickel, cobalt or their alloys. The insulator layer may include amaterial like magnesium oxide (MgO). Due to the stack shape of the IMDstack 320, the MTJ layer 340 has two vertical portions along the twosidewalls of the IMD stack 320 respectively, and horizontal portionsabove the IMD stack 320 and above the backend layer 310.

In one embodiment, the MTJ layer 340 may be formed by depositing a fixedlayer, a barrier layer, and a free layer, in respective order. The fixedlayer is a synthetic anti-ferromagnetic (SAF) layer that may furtherinclude a bottom layer, a metal layer over the bottom layer, and a toppinned layer over the metal layer. The bottom layer may includeferromagnetic materials like CoFeB, NiFe, CoFe, Fe, etc. The metal layermay include metal materials like Ru, Cu, Ta, etc. The top pinned layermay include ferromagnetic materials like CoFeB, NiFe, CoFe, Fe, etc. Thebarrier layer is an insulation layer that includes materials like Al₂O₃,MgO, etc. The free layer includes ferromagnetic materials like CoFeB,NiFe, CoFe, Fe, etc. In one example, the MTJ layer 340 may have a totalthickness between 100 Angstroms and 500 Angstroms.

FIG. 3F is a cross-sectional view of the MRAM device 300 including asecond electrode layer 350, formed over the MTJ layer 340, at one of thevarious stages of fabrication, according to some embodiments of thepresent disclosure. According to some embodiments, the second electrodelayer 350 may be formed by depositing a metal material, e.g. tantalumnitride (TaN). Due to the stack shape of the IMD stack 320, the secondelectrode layer 350 has two vertical portions along the two sidewalls ofthe IMD stack 320 respectively, and horizontal portions above the IMDstack 320 and above the backend layer 310. As such, the first electrodelayer 330, the MTJ layer 340, and the second electrode layer 350 form asandwich structure (hereinafter “memory cell sandwich”) over the IMDstack 320 and the backend layer 310. The memory cell sandwich includestwo vertical portions along the two sidewalls of the IMD stack 320respectively, and horizontal portions above the IMD stack 320 and abovethe backend layer 310.

FIG. 3G is a cross-sectional view of the MRAM device 300 including aphotoresist 381, which is formed on the horizontal portion of the memorycell sandwich above the IMD stack 320, at one of the various stages offabrication, according to some embodiments of the present disclosure. Asshown in FIG. 3G, the photoresist 381 has a profile that covers the twovertical portions of the memory cell sandwich and the IMD stack 320between the two vertical portions of the memory cell sandwich. Thesidewalls of the photoresist 381 align with the outside walls of the twovertical portions of the memory cell sandwich, i.e. aligning with theoutside walls of the two vertical portions of the second electrode layer350. In one embodiment, the photoresist 381 may be formed by adeposition process to form a photoresist layer over the IMD stack 320,and a lithography process to define the profile of the photoresist layerthat includes the photoresist 381. The photoresist 381 may include alight-sensitive material same as or different from the photoresist 380.

FIG. 3H is a cross-sectional view of the MRAM device 300 in which thememory cell sandwich including the first electrode layer 330, the MTJlayer 340 and the second electrode layer 350 is patterned, at one of thevarious stages of fabrication, according to some embodiments of thepresent disclosure. According to some embodiments, the memory cellsandwich is patterned to remove horizontal portions above the backendlayer 310 that are not covered by the photoresist 381 as shown in FIG.3G. As such, the remaining portions of the memory cell sandwich form astack cap covering the IMD stack 320. The stack cap includes ahorizontal portion above the IMD stack 320 and two vertical portionsadjoining the two sidewalls of the IMD stack 320 respectively.

In some embodiments, the patterning process performed on the memory cellsandwich may include: based on a profile of the photoresist 381 definedby a lithography process, a dry/wet etching process to etch portions ofthe memory cell sandwich that are not covered by the defined profile ofthe lithography process layer, a cleaning process, and a soft/hardbaking process to form the patterned memory cell sandwich.

FIG. 3I is a cross-sectional view of the MRAM device 300′, which shows alarger portion of the MRAM device compared to the portion of the MRAMdevice shown in FIG. 3H, in which the memory cell sandwiches eachincluding the first electrode layer 330, the MTJ layer 340 and thesecond electrode layer 350 are patterned, at one of the various stagesof fabrication, according to some embodiments of the present disclosure.According to some embodiments, the distance between two adjacent IMDstacks 320 is controlled to maximize the storage density of the MRAMdevice 300′.

FIG. 3J is a cross-sectional view of the MRAM device 300′ including aprotective layer 361, an additional IMD layer 362, and an optionalcoating layer 363 which are formed on the patterned memory cell sandwichand the backend layer 310, at one of the various stages of fabrication,according to some embodiments of the present disclosure. According tosome embodiments, the protective layer 361 may be formed by depositing asilicon carbide (SiC) for protection of the electrodes. Due to the stackshape of the IMD stacks 320, the protective layer 361 has two verticalportions along the two sidewalls of each IMD stack 320 respectively, andhorizontal portions on the IMD stacks 320 and on the backend layer 310.According to some embodiments, the additional IMD layer 362 may beformed by depositing a dielectric material that is same as or differentfrom the dielectric material in the IMD stacks 320. The additional IMDlayer 362 may be used for electrical isolation between adjacent memorycells. According to some embodiments, the optional coating layer 363 maybe formed by depositing an anti-reflective coating (ARC) material. Inone embodiment, each of these depositions may be a normal backend-of-line (BEOL) film deposition. The coating layer 363 is optionaland it will be polished as shown in FIG. 3K.

FIG. 3K is a cross-sectional view of the MRAM device 300′ in which thetop portions of all layers including the stack caps (i.e. the memorycell sandwiches 330, 340, 350) above the backend layer 310 are removed,at one of the various stages of fabrication, according to someembodiments of the present disclosure. According to some embodiments,the top portions of all layers above the backend layer 310 are removedby a chemical mechanical planarization (CMP) polishing process.Specifically, the ARC layer 363, the top portion of the additional IMDlayer 362, the horizontal portions of the protective layer 361 on theIMD stacks 320, the horizontal portions of the patterned memory cellsandwiches 330, 340, 350, on the IMD stacks 320, and optionally some topportions of the IMD stacks 320, are all removed e.g. by the CMPpolishing. After the CMP polishing process, a top surface of all layersabove the backend layer 310 is forming. As shown in FIG. 3K, after theCMP polishing process, each memory cell sandwich extends vertically, oralong a direction perpendicular to an upper surface of the backend layer310. Each memory cell sandwich includes two vertical electrodes and avertical MTJ between and coupled to the two vertical electrodes. Eachmemory cell sandwich has two sidewalls, where one sidewall is coupled toa sidewall of an adjacent IMD stack 320 and the other sidewall iscoupled to an adjacent vertical portion of the protective layer 361.

FIG. 3L is a cross-sectional view of the MRAM device 300′ includinganother additional coating layer 364 which is formed on the top surfaceof all layers above the backend layer 310 as shown in FIG. 3K, and apatterned photoresist layer 382 which is formed on the coating layer364, at one of the various stages of fabrication, according to someembodiments of the present disclosure. According to some embodiments,the coating layer 364 may be formed by depositing an ARC material thatis same as or different from the coating layer 363.

As shown in FIG. 3L, the patterned photoresist layer 382 has a profilethat covers the backend layer 310 except the conductive materials 315 inthe backend layer 310. In one embodiment, the photoresist layer 382 maybe formed by a deposition process to form a photoresist layer over thecoating layer 364, and a lithography process to define the profile ofthe photoresist layer 382. The photoresist layer 382 may include alight-sensitive material that is same as or different from thephotoresist 380 and/or the photoresist 381. As shown in FIG. 3L, thedefined profile of the photoresist layer 382 includes uncovered portionsaligning with the conductive materials 315 in the backend layer 310.

As discussed before, the sidewalls of each IMD stack 320 align with theoutside walls of the two adjacent conductive materials 315 under the IMDstack 320. As such, one side of each uncovered portion of the patternedphotoresist layer 382 aligns with a sidewall of a corresponding IMDstack 320 and hence aligns with a sidewall of a vertical portion of acorresponding memory cell sandwich, i.e. aligning with a verticalportion of the first electrode layer 330 of a corresponding memory cellsandwich.

FIG. 3M is a cross-sectional view of the MRAM device 300′ in which theIMD stacks 320 are patterned, at one of the various stages offabrication, according to some embodiments of the present disclosure.According to some embodiments, each IMD stack 320 is patterned to removetwo portions above the two corresponding conductive materials 315 underthe IMD stack 320, i.e. the two portions of the IMD stack 320 that arenot covered by the photoresist layer 382 as shown in FIG. 3L.

In some embodiments, the patterning process performed on the IMD stacks320 may include: based on a profile of the photoresist layer 382 definedby a lithography process, a dry/wet etching process to etch portions ofeach IMD stack 320 that are not covered by the defined profile of thephotoresist layer 382, a cleaning process, and a soft/hard bakingprocess to form each patterned IMD stack 320.

As shown in FIG. 3M, each patterned IMD stack 320 is surrounded by twoopenings 365, each of which is above a corresponding conductive material315 and adjoins a vertical portion of the first electrode layer 330 of acorresponding memory cell sandwich. In one example, the etching processperformed on the IMD stacks 320 can be controlled, e.g. by controllingthe etching time, to make each opening 365 have a proper depth such thata corresponding conductive material 315 in the backend layer 310 isexposed through the opening 365.

FIG. 3N is a cross-sectional view of the MRAM device 300′ including aphotoresist layer 383 which is formed on the coating layer 364 and theexposed conductive materials 315 in the backend layer 310, at one of thevarious stages of fabrication, according to some embodiments of thepresent disclosure. According to some embodiments, the photoresist layer383 may include a light-sensitive material that is same as or differentfrom the photoresist 380, the photoresist 381, and/or the photoresistlayer 382. In one embodiment, the photoresist layer 383 may be formed bya deposition process to form a photoresist layer over the coating layer364 and the exposed conductive materials 315 in the backend layer 310,and a lithography process to define a profile of the photoresist layer383.

FIG. 3O is a cross-sectional view of the MRAM device 300′ in which anexposure process is performed on the photoresist layer 383 to form apattern of the photoresist layer 383, at one of the various stages offabrication, according to some embodiments of the present disclosure. Asshown in FIG. 3O, the patterned photoresist layer 383 has a profile thatcovers the IMD stacks 320, the memory cell sandwiches 330, 340, 350, buthas some gaps 366 exposing vertical portions of the protective layer 361and some portions of the additional IMD layer 362. Each of the gaps 366of the patterned photoresist layer 383 has one side aligning with asidewall of a corresponding memory cell sandwich, i.e. aligning with asidewall of the second electrode layer 350 of a corresponding memorycell sandwich.

FIG. 3P is a cross-sectional view of the MRAM device 300′ in which theprotective layer 361 and the additional IMD layer 362 are patterned, atone of the various stages of fabrication, according to some embodimentsof the present disclosure. According to some embodiments, the protectivelayer 361 and the additional IMD layer 362 are patterned to remove theirportions beside an adjacent memory cell sandwich, i.e. the portions ofthe protective layer 361 and the additional IMD layer 362 that are notcovered by the photoresist layer 383 as shown in FIG. 3O.

In some embodiments, the patterning process performed on the protectivelayer 361 and the additional IMD layer 362 may include: based on aprofile of the photoresist layer 383 defined by a lithography process, adry/wet etching process to etch portions of the protective layer 361 andthe additional IMD layer 362 that are not covered by the defined profileof the photoresist layer 383, a cleaning process, and a soft/hard bakingprocess to form the patterned protective layer 361 and the patterned IMDlayer 362.

As shown in FIG. 3P, the patterned IMD layer 362 includes a plurality ofIMD stacks 362 each of which is surrounded by two openings 367. Eachopening 367 adjoins a vertical portion of the second electrode layer 350of a corresponding memory cell sandwich. In one example, the etchingprocess performed on the protective layer 361 and the additional IMDlayer 362 can be controlled, e.g. by controlling the etching time, tomake each opening 367 have a proper depth such that an adjacentelectrode 350 of a memory cell sandwich (which can also be referred toas a memory cell hereinafter) is exposed through the opening 367, butthe electrode 330 and the MTJ 340 of the same memory cell are protectedby the protective layer 361 and are not exposed through the opening 367.As such, both electrodes 330, 350 of each memory cell have been exposedfor electrical connection. In addition, the coating layer 364 has beenremoved through the in-situ etching at FIG. 3P as well.

FIG. 3Q is a cross-sectional view of the MRAM device 300′ including aconductive layer 370 which is formed over all layers shown in FIG. 3P,at one of the various stages of fabrication, according to someembodiments of the present disclosure. According to some embodiments,the conductive layer 370 may be formed by plating some conductivematerial, e.g. copper (Cu). As shown in FIG. 3Q, the plated conductivematerial fills in the openings 365 and 367 such that each electrode 330,350 of each memory cell has been electrically connected to a conducivematerial. The conducive material plated into each opening 365 iselectrically coupled to the corresponding conductive material 315 underthe opening 365.

FIG. 3R is a cross-sectional view of the MRAM device 300′ in which thetop portion of the conductive layer 370 is removed, at one of thevarious stages of fabrication, according to some embodiments of thepresent disclosure. According to some embodiments, the top portion ofthe conductive layer 370 is removed by a CMP polishing process. Afterthe CMP polishing process, the remaining portions of the conductivelayer 370 are respectively filling in the openings 365 and the openings367, such that there is no top portion of the conductive layer 370 lefton any memory cell to electrically connect the remaining portions in theopenings 365 and the openings 367.

According to some embodiments, each remaining portion of the conductivelayer 370 in each opening 365 and the corresponding conductive material315 under the opening 365 together form a first conductive line, andeach remaining portion of the conductive layer 370 in each opening 367forms a second conductive line. Each first conductive line extends alonga first direction through the backend layer 310 and may electricallyconnect the electrode 330 of the adjoining memory cell with an electrodeof a neighbor memory cell above or under the backend layer 310. Eachsecond conductive line extends along a second direction in parallel withthe backend layer 310 and may electrically connect the electrode 350 ofthe adjoining memory cell with an electrode of a neighbor memory cell onthe backend layer 310. In various embodiments, one of the first andsecond conductive lines is a bit line; and the other one of the firstand second conductive lines is a word line.

FIG. 4 illustrates a top view of an exemplary memory device 400, inaccordance with some embodiments of the present disclosure. In theillustrated embodiment of FIG. 4, the memory device 400 includes aplurality of memory cells 401, 402 arranged in an array. In oneembodiment, each memory cell in FIG. 4 is an MRAM cell having a verticalstructure that is fabricated based on a process illustrated in FIGS.3A-3R.

As shown in FIG. 4, any two adjacent MRAM cells, e.g. the two adjacentMRAM cells 401, 402, that are arranged in a same column is electricallyconnected with each other by a conductive line 420, which corresponds tothe conductive line formed in the opening 367 described with respect toFIGS. 3P-3R. Any MRAM cell in FIG. 4, e.g. the MRAM cell 401 iselectrically connected with a neighbor MRAM cell (not shown in FIG. 4)under or above the backend layer by a conductive line 410, whichcorresponds to the conductive line formed in the opening 365 describedwith respect to FIGS. 3P-3R. As shown in FIG. 4, any two adjacent MRAMcells, e.g. the two adjacent MRAM cells 401, 403, that are arranged in asame row is isolated from each other by a dielectric material 409. Asdiscussed before with respect to FIG. 2, due to the vertical structureof the MRAM cells in FIG. 4, the MRAM device 400 can have a storagedensity higher (e.g. by 25%) than that of an MRAM device with ahorizontal or lateral structure.

FIG. 5 illustrates a cross-sectional view of an exemplary memory cell500, in accordance with some embodiments of the present disclosure. Thememory cell 500 may be an MRAM cell that is fabricated based on aprocess illustrated in FIGS. 3A-3R. As shown in FIG. 5, the memory cell500 includes a vertical sandwich structure that extends along adirection (direction Z in FIG. 5) perpendicular to an upper surface of abackend IMD layer 510. The vertical sandwich structure includes a firstelectrode 530, a second electrode 550, and an MTJ 540 sandwiched betweenthe two electrodes. Each of the first electrode 530, the secondelectrode 550, and the MTJ 540 extends vertically or perpendicular tothe upper surface of the backend IMD layer 510. The first electrode 530is electrically connected to a conductive line 571 that extends alongthe Z direction through the backend IMD layer 510 and may connect thefirst electrode 530 to an electrode of another memory cell above orunder the backend IMD layer 510. The second electrode 550 iselectrically connected to a conductive line 572 that extends along adirection (direction X in FIG. 5) the backend IMD layer 510 and mayconnect the second electrode 550 to an electrode of another memory cellon the backend IMD layer 510. The memory cell 500 is isolated by adielectric material 520, 562 from other memory cells arranged along adirection (direction Y in FIG. 5) that is in parallel with the backendIMD layer 510 and perpendicular to the direction X. The protective layer561 in FIG. 5 can protect the electrodes 530, 550 and the MTJ 540 in thememory cell 500.

FIG. 6 illustrates exemplary conductive lines electrically connectingmultiple memory cells, in accordance with some embodiments of thepresent disclosure. As shown in FIG. 6, two adjacent memory cells areelectrically connected by a conductive line 572 extending along thedirection X. In one embodiment, each of the two adjacent memory cellsmay be an MRAM cell that is fabricated based on a process illustrated inFIGS. 3A-3R and has a vertical structure extending along the direction Zas shown in FIG. 5. As shown in FIG. 6, each memory cell is electricallyconnected by a conductive line 571 extending along the direction Z,where the conductive line 571 may electrically connect the memory cellto a neighbor memory cell (not shown in FIG. 6) arranged along thedirection Z.

FIG. 7 is a flow chart illustrating an exemplary method 700 for forminga memory cell, in accordance with some embodiments of the presentdisclosure. At operation 702, an inter-metal dielectric layer is formedon a backend layer. One or more portions of the inter-metal dielectriclayer is removed at operation 704 to form a stack comprising a sidewall.A first electrode layer is formed at operation 706 over the stack andthe backend layer. A magnetic tunnel junction (MTJ) layer is formed atoperation 708 over the first electrode layer. A second electrode layeris formed at operation 710 over the MTJ layer.

The first electrode layer, the magnetic tunnel junction layer and thesecond electrode layer are etched at operation 712 to form a stack capcovering the stack. A silicon carbide layer is formed at operation 714over the stack cap and the backend layer. An additional inter-metaldielectric layer is formed at operation 716 over the silicon carbidelayer. Top portions of all layers above the backend layer are polishedat operation 718 such that the remaining portions of the electrodelayers and the MTJ layer adjoin a sidewall of stack and extendvertically or perpendicular to an upper surface of the backend layer. Atoperation 720, a first conductive line electrically connected to thefirst electrode and a second conductive line electrically connected tothe second electrode are formed. It can be understood that the order ofthe steps shown in FIG. 7 may be changed according to differentembodiments of the present disclosure.

In an embodiment, a memory cell formed on a backend layer over asubstrate is disclosed. The memory cell includes: a first electrode, asecond electrode and a magnetic tunnel junction. The first electrode hassidewalls and a bottom surface disposed over the backend layer. Thesecond electrode has sidewalls and a bottom surface in contact with thebackend layer. The magnetic tunnel junction is formed between the firstelectrode and the second electrode. The magnetic tunnel junction iscoupled to a sidewall of the first electrode and coupled to a sidewallof the second electrode.

In another embodiment, a memory device is disclosed. The memory deviceincludes a backend layer and plurality of memory cells formed on thebackend layer. Each of the plurality of memory cells includes: a firstelectrode, a second electrode and a magnetic tunnel junction. The firstelectrode has sidewalls and a bottom surface disposed over the backendlayer. The second electrode has sidewalls and a bottom surface incontact with the backend layer. The magnetic tunnel junction is formedbetween the first electrode and the second electrode. The magnetictunnel junction is coupled to a sidewall of the first electrode andcoupled to a sidewall of the second electrode.

In yet another embodiment, a method for forming a memory cell isdisclosed. The method includes: forming an inter-metal dielectric layeron a backend layer; removing one or more portions of the inter-metaldielectric layer to form a stack comprising a sidewall; forming a firstelectrode layer over the stack and the backend layer; forming a magnetictunnel junction layer over the first electrode layer; forming a secondelectrode layer over the magnetic tunnel junction layer; and removingportions of the first electrode layer, the magnetic tunnel junctionlayer and the second electrode layer, wherein the remaining portions ofthe first electrode layer, the magnetic tunnel junction layer and thesecond electrode layer adjoin the sidewall of the stack and extend alonga direction perpendicular to an upper surface of the backend layer.

The foregoing outlines features of several embodiments so that thoseordinary skilled in the art may better understand the aspects of thepresent disclosure. Those skilled in the art should appreciate that theymay readily use the present disclosure as a basis for designing ormodifying other processes and structures for carrying out the samepurposes and/or achieving the same advantages of the embodimentsintroduced herein. Those skilled in the art should also realize thatsuch equivalent constructions do not depart from the spirit and scope ofthe present disclosure, and that they may make various changes,substitutions, and alterations herein without departing from the spiritand scope of the present disclosure.

1. A memory cell formed on a backend layer over a substrate, comprising:a first electrode with sidewalls and a bottom surface disposed over thebackend layer; a second electrode with sidewalls and a bottom surface incontact with the backend layer; and a magnetic tunnel junction formedbetween the first electrode and the second electrode, wherein themagnetic tunnel junction is coupled to a sidewall of the first electrodeand coupled to a sidewall of the second electrode.
 2. The memory cell ofclaim 1, wherein: the backend layer extends in a first direction; andthe magnetic tunnel junction extends in a second direction substantiallyperpendicular to the first direction.
 3. The memory cell of claim 1,further comprises: a first conductive line that extends along a firstdirection over the backend layer and electrically connects the firstelectrode with an electrode of a first neighbor memory cell on thebackend layer; and a second conductive line that extends along a seconddirection through the backend layer and electrically connects the secondelectrode with an electrode of a second neighbor memory cell under thebackend layer.
 4. The memory cell of claim 3, wherein one of the firstand second conductive lines is a bit line; and the other one of thefirst and second conductive lines is a word line.
 5. The memory cell ofclaim 3, wherein: a total thickness of the first electrode, the secondelectrode and the magnetic tunnel junction along a third direction thatis in parallel with the backend layer and perpendicular to the firstdirection is about 1000 Angstroms; and a maximum value of lengths of thefirst electrode, the second electrode and the magnetic tunnel junctionalong the first direction is about 1450 Angstroms.
 6. The memory cell ofclaim 3, wherein a total thickness of the first electrode, the secondelectrode and the magnetic tunnel junction along a third direction thatis in parallel with the backend layer and perpendicular to the firstdirection is less than a maximum value of lengths of the firstelectrode, the second electrode and the magnetic tunnel junction alongthe first direction.
 7. The memory cell of claim 3, wherein each of thefirst and second conductive lines is isolated by a dielectric materialfrom a neighbor memory cell arranged along a third direction that is inparallel with the backend layer and perpendicular to the firstdirection.
 8. A memory device, comprising: a backend layer over asubstrate; and a plurality of memory cells formed on the backend layer,wherein each of the plurality of memory cells comprises a firstelectrode having a sidewall that extends substantially perpendicular tothe backend layer disposed over the substrate, a second electrode havinga sidewall that extends substantially perpendicular to the backend layerand a magnetic tunnel junction formed between the first electrode andthe second electrode, wherein the magnetic tunnel junction is arrangedbetween the sidewalls of the first electrode and the second electrode.9. The memory device of claim 8, wherein: the backend layer extends in afirst direction; and the magnetic tunnel junction extends in a seconddirection substantially perpendicular to the first direction.
 10. Thememory device of claim 8, wherein each of the plurality of memory cellsfurther comprises: a first conductive line that extends along a firstdirection over the backend layer and electrically connects the firstelectrode with an electrode of a first neighbor memory cell in theplurality of memory cells; and a second conductive line that extendsalong a second direction perpendicular to the backend layer andelectrically connects the second electrode with an electrode of a secondneighbor memory cell.
 11. The memory device of claim 10, furthercomprising: an additional backend layer above or under the backendlayer; and an additional plurality of memory cells formed on theadditional backend layer, wherein the second neighbor memory cell is oneof the additional plurality of memory cells.
 12. The memory device ofclaim 10, wherein one of the first and second conductive lines is a bitline; and the other one of the first and second conductive lines is aword line.
 13. The memory device of claim 10, wherein: a total thicknessof the first electrode, the second electrode and the magnetic tunneljunction in each memory cell along a third direction that is in parallelwith the backend layer and perpendicular to the first direction is about1000 Angstroms; and a maximum value of lengths of the first electrode,the second electrode and the magnetic tunnel junction in each memorycell along the first direction is about 1450 Angstroms.
 14. The memorydevice of claim 10, wherein a total thickness of the first electrode,the second electrode and the magnetic tunnel junction in each memorycell along a third direction that is in parallel with the backend layerand perpendicular to the first direction is less than a maximum value oflengths of the first electrode, the second electrode and the magnetictunnel junction in each memory cell along the first direction.
 15. Thememory device of claim 8, wherein: the plurality of memory cells forms asquare array extending along a first direction perpendicular to thesidewall of the second electrode and along a second directionperpendicular to the first direction; and each of the plurality ofmemory cells has a first neighbor memory cell along the first directionand a second neighbor memory cell along the second direction.
 16. Thememory device of claim 15, wherein: the first neighbor memory cell isarranged about 1050 Angstroms away from the memory cell along the firstdirection and is isolated by a dielectric material from the memory cell;and the second neighbor memory cell is arranged about 1700 Angstromsaway from the memory cell along the second direction and is isolated bythe dielectric material from the memory cell.
 17. A method for forming amemory cell, comprising: forming an inter-metal dielectric layer on abackend layer; removing one or more portions of the inter-metaldielectric layer to form a stack comprising a sidewall; forming a firstelectrode layer over the stack and the backend layer; forming a magnetictunnel junction layer over the first electrode layer; forming a secondelectrode layer over the magnetic tunnel junction layer; and removingportions of the first electrode layer, the magnetic tunnel junctionlayer and the second electrode layer, wherein the remaining portions ofthe first electrode layer, the magnetic tunnel junction layer and thesecond electrode layer adjoin the sidewall of the stack and extend alonga direction perpendicular to an upper surface of the backend layer. 18.The method of claim 17, wherein removing portions of the first electrodelayer, the magnetic tunnel junction layer and the second electrode layercomprises: etching the first electrode layer, the magnetic tunneljunction layer and the second electrode layer to form a stack capcovering the stack; forming a silicon carbide layer over the stack capand the backend layer; forming an additional inter-metal dielectriclayer over the silicon carbide layer; and polishing top portions of alllayers including the stack cap on the backend layer such that theremaining portions of the first electrode layer, the magnetic tunneljunction layer and the second electrode layer adjoin the sidewall of thestack and extend along the direction perpendicular to the upper surfaceof the backend layer.
 19. The method of claim 18, further comprising:forming an anti-reflective coating layer over a top surface of alllayers on the backend layer after the polishing; etching a first openingthrough the stack to the upper surface of the backend layer to expose asidewall of a first electrode of the first electrode layer; etching asecond opening through the additional inter-metal dielectric layer toexpose a sidewall of a second electrode of the second electrode layer;and forming a conductive material in the first and second openings. 20.The method of claim 19, wherein: forming a first conductive line usingthe conductive material in the first opening and an additionalconductive material in the backend layer, wherein the first conductiveline extends along a first direction through the backend layer andelectrically connects the first electrode with an electrode of a firstneighbor memory cell above or under the backend layer; and forming asecond conductive line using the conductive material in the secondopening, wherein the second conductive line extends along a seconddirection substantially perpendicular to the first direction andelectrically connects the second electrode with an electrode of a secondneighbor memory cell on the backend layer.